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Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy
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10.1063/1.116746
/content/aip/journal/apl/68/1/10.1063/1.116746
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116746
/content/aip/journal/apl/68/1/10.1063/1.116746
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/content/aip/journal/apl/68/1/10.1063/1.116746
1996-01-01
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116746
10.1063/1.116746
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