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Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using in situ scanning electron microscopy
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10.1063/1.116758
/content/aip/journal/apl/68/1/10.1063/1.116758
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116758
/content/aip/journal/apl/68/1/10.1063/1.116758
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/content/aip/journal/apl/68/1/10.1063/1.116758
1996-01-01
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using insitu scanning electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116758
10.1063/1.116758
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