1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
Rent:
Rent this article for
USD
10.1063/1.116763
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 CCAST (World Laboratory) P. O. Box 8730, Beijing 100080, People’s Republic of China, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083, People’s Republic of China, and Center of Advanced Science and Technology of Microstructures, Nanjing 21008, People’s Republic of China
    2 Department of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Shanghai 200050, People’s Republic of China
    Appl. Phys. Lett. 68, 78 (1996); http://dx.doi.org/10.1063/1.116763
/content/aip/journal/apl/68/1/10.1063/1.116763
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116763
/content/aip/journal/apl/68/1/10.1063/1.116763
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/68/1/10.1063/1.116763
1996-01-01
2014-09-02
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/1/10.1063/1.116763
10.1063/1.116763
SEARCH_EXPAND_ITEM