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Source of Ge centers in AlGaAs grown by organometallic vapor phase epitaxy and the effect of impurity getters
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10.1063/1.116082
/content/aip/journal/apl/68/10/10.1063/1.116082
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/10/10.1063/1.116082
/content/aip/journal/apl/68/10/10.1063/1.116082
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/content/aip/journal/apl/68/10/10.1063/1.116082
1996-03-04
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Source of Ge centers in AlGaAs grown by organometallic vapor phase epitaxy and the effect of impurity getters
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/10/10.1063/1.116082
10.1063/1.116082
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