No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxial growth of GaN/GaAs‐based heterostructures
1.F. Davis, Proc. IEEE 79, 702 (1991).
2.S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3.I. Akasaki and H. Amano, J. Electrochem. Soc. 141, 2266 (1994).
4.M. A. Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George, Appl. Phys. Lett. 65, 520 (1994).
5.S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
6.H. Morkoç and B. Sverdlov (unpublished).
7.R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O’Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995).
8.R. J. Hauenstein, D. A. Collins, M. L. O’Steen, Z. Z. Bandić, and T. C. McGill, Mater. Res. Soc. Symp. Proc. 388, 259 (1995).
9.The efficiency factor (defined here with units of area) corresponds to possible physical subprocesses such as adsorption, surface migration, dimerization and re-evaporation, chemical kinetics of As–N exchange, etc., and in general might depend on surface chemistry, strain, and temperature, but in our simplified model, is approximated as constant over the temperature and compositional ranges of interest.
10.R. M. Feenstra (unpublished).
11.H. Jorke, Surf. Sci. 193, 569 (1988).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month