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Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique
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10.1063/1.116023
/content/aip/journal/apl/68/13/10.1063/1.116023
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/13/10.1063/1.116023
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/content/aip/journal/apl/68/13/10.1063/1.116023
1996-03-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/13/10.1063/1.116023
10.1063/1.116023
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