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All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification
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10.1063/1.116665
/content/aip/journal/apl/68/13/10.1063/1.116665
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/13/10.1063/1.116665
/content/aip/journal/apl/68/13/10.1063/1.116665
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/content/aip/journal/apl/68/13/10.1063/1.116665
1996-03-25
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/13/10.1063/1.116665
10.1063/1.116665
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