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Effect of the oxide‐desorption temperature on the substrate–epilayer interface charge in organometallic vapor‐phase epitaxy of GaAs
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10.1063/1.115606
/content/aip/journal/apl/68/15/10.1063/1.115606
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/15/10.1063/1.115606
/content/aip/journal/apl/68/15/10.1063/1.115606
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/content/aip/journal/apl/68/15/10.1063/1.115606
1996-04-08
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the oxide‐desorption temperature on the substrate–epilayer interface charge in organometallic vapor‐phase epitaxy of GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/15/10.1063/1.115606
10.1063/1.115606
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