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Surfactant‐mediated epitaxy of Ge on partially Ga‐terminated Si(111) surfaces
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10.1063/1.115862
/content/aip/journal/apl/68/16/10.1063/1.115862
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/16/10.1063/1.115862
/content/aip/journal/apl/68/16/10.1063/1.115862
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/content/aip/journal/apl/68/16/10.1063/1.115862
1996-04-15
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surfactant‐mediated epitaxy of Ge on partially Ga‐terminated Si(111) surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/16/10.1063/1.115862
10.1063/1.115862
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