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Resistless, area‐selective ultrashallow P +/N junction fabrication using projection gas immersion laser doping
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10.1063/1.115844
/content/aip/journal/apl/68/17/10.1063/1.115844
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/17/10.1063/1.115844
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/content/aip/journal/apl/68/17/10.1063/1.115844
1996-04-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistless, area‐selective ultrashallow P+/N junction fabrication using projection gas immersion laser doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/17/10.1063/1.115844
10.1063/1.115844
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