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Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition
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10.1063/1.116451
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    Affiliations:
    1 State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
    2 Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
    3 State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
    Appl. Phys. Lett. 68, 176 (1996); http://dx.doi.org/10.1063/1.116451
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/content/aip/journal/apl/68/2/10.1063/1.116451
1996-01-08
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/2/10.1063/1.116451
10.1063/1.116451
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