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New near‐infrared defect luminescence in GaN doped with vanadium by ion implantation
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8.The line appears in GaN and AlN layers, both grown on sapphire substrate, at exactly the same position. In as-grown samples it appears alone, even if none of the other transitions in Fig. 2 is observed. Thus it is likely to be correlated to an impurity in the sapphire substrate.
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