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New near‐infrared defect luminescence in GaN doped with vanadium by ion implantation
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10.1063/1.116460
/content/aip/journal/apl/68/2/10.1063/1.116460
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/2/10.1063/1.116460
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/content/aip/journal/apl/68/2/10.1063/1.116460
1996-01-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New near‐infrared defect luminescence in GaN doped with vanadium by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/2/10.1063/1.116460
10.1063/1.116460
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