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Transport characterization of in‐plane gate devices fabricated by direct epitaxial growth on patterned substrates
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10.1063/1.115801
/content/aip/journal/apl/68/22/10.1063/1.115801
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/22/10.1063/1.115801
/content/aip/journal/apl/68/22/10.1063/1.115801
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/content/aip/journal/apl/68/22/10.1063/1.115801
1996-05-27
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport characterization of in‐plane gate devices fabricated by direct epitaxial growth on patterned substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/22/10.1063/1.115801
10.1063/1.115801
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