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Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]
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1.M. Asif Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George, Appl. Phys. Lett. 65, 520 (1994).
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2.Gain measurements are typically an order of magnitude lower at this excitation power: K. L. Shaklee, R. E. Nahory, and R. F. Leheny, J. Lumin. 7, 284 (1973).
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1996-05-27
2014-09-22
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Scitation: Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/22/10.1063/1.116057
10.1063/1.116057
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