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Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]
1.M. Asif Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George, Appl. Phys. Lett. 65, 520 (1994).
2.Gain measurements are typically an order of magnitude lower at this excitation power: K. L. Shaklee, R. E. Nahory, and R. F. Leheny, J. Lumin. 7, 284 (1973).
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