1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self‐assembled film and reactive ion etching
Rent:
Rent this article for
USD
10.1063/1.116396
/content/aip/journal/apl/68/4/10.1063/1.116396
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/4/10.1063/1.116396
Loading

Article metrics loading...

/content/aip/journal/apl/68/4/10.1063/1.116396
1996-01-22
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self‐assembled film and reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/4/10.1063/1.116396
10.1063/1.116396
SEARCH_EXPAND_ITEM