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Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
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10.1063/1.115725
/content/aip/journal/apl/68/8/10.1063/1.115725
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/8/10.1063/1.115725
/content/aip/journal/apl/68/8/10.1063/1.115725
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/content/aip/journal/apl/68/8/10.1063/1.115725
1996-02-19
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by insitu molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/8/10.1063/1.115725
10.1063/1.115725
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