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Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]
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1.
1.Lead references for EPR studies include the following: J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72, 2745 (1994); E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993); J. F. Conley and P. M. Lenahan, ibid, 62, 40 (1993); P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979); Y. Nishi, Jpn. J. Appl. Phys. 10, 52 (1971).
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2.Lead references for device based observations include the following: J. M. M. Nijs, K. G. Druijf, V. V. Afanas’ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci. 37, 1624 (1990); 36, 1848 (1989); N. M. Johnson, D. K. Biegelson, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983); A. G. Revesz, J. Electrochem. Soc. 126, 122 (1979).
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3.A general overview of hydrogen at the interface can be found in The Physics and Chemistry of and the Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1993), Vol. 2.
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4.H. Ogawa, N. Terada, K. Sugiyama, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appl. Surf. Sci. 56-58, 836 (1992); T. Hattori and H. Ogawa, Appl. Phys. Lett. 61, 577 (1992); T. Hattori, Thin Solid Films 206, 1 (1991); P. J. Gruthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).
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5.T. Kuroda and H. Iwakuro, Jpn. J. Appl. Phys. 32, 1273 (1993); G. Fortunato, L. Mariucci, A. Pecora, M. Fanfoni, and S. Priori, Appl. Phys. Lett. 60, 1564 (1992); M. Fanfoni, A. Pecora, G. Fortunato, L. Mariucci, S. Priori, and C. Quaresima, J. Non-Cryst. Solids 137&138, 1079 (1991).
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6.R. Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues, and E. J. van Loenen, Phys. Rev. Lett. 55, 2332 (1985).
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7.For lead references into the ongoing discussion of binding energy assignments in the interface region see Refs. 8 and 9 in this letter as well as the following references: A. Pasquarello, M. S. Hybertson, and R. Car, Phys. Rev. Lett. 74, 1024 (1995); H. Kageshima and M. Tabe in Control of Semiconductor Interfaces (Elsevier, New York, 1994); F. J. Himpsel, D. A. Lapiano-Smith, and J. F. Bevk, in Ref. 3, pp. 237–245.
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8.F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
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9.(a) M. M. Banaszak Holl and F. R. McFeely, Phys. Rev. Lett. 71, 2441 (1993); (b) M. M. Banaszak Holl, S. Lee, and F. R. McFeely, Appl. Phys. Lett. 65 1097 (1994); (c) S. Lee, S. Makan, M. M. Banaszak Holl, and F. R. McFeely, J. Am. Chem. Soc. 116, 11819 (1994).
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10.See Ref. 9(b) and references therein.
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11.F. Rochet, S. Rigo, M. Froment, C. D’Anterroches, C. Maillot, H. Roulet, and G. Dufour, Adv. Phys. 35, 237 (1986).
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12.D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1977); F. Yonezawa, S. Sakamoto, and M. Hori, J. Non-Cryst. Solids 137&138, 135 (1991).
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Scitation: Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]
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