banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]
Rent this article for
Access full text Article
1.Lead references for EPR studies include the following: J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72, 2745 (1994); E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993); J. F. Conley and P. M. Lenahan, ibid, 62, 40 (1993); P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979); Y. Nishi, Jpn. J. Appl. Phys. 10, 52 (1971).
2.Lead references for device based observations include the following: J. M. M. Nijs, K. G. Druijf, V. V. Afanas’ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci. 37, 1624 (1990); 36, 1848 (1989); N. M. Johnson, D. K. Biegelson, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983); A. G. Revesz, J. Electrochem. Soc. 126, 122 (1979).
3.A general overview of hydrogen at the interface can be found in The Physics and Chemistry of and the Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1993), Vol. 2.
4.H. Ogawa, N. Terada, K. Sugiyama, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appl. Surf. Sci. 56-58, 836 (1992); T. Hattori and H. Ogawa, Appl. Phys. Lett. 61, 577 (1992); T. Hattori, Thin Solid Films 206, 1 (1991); P. J. Gruthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).
5.T. Kuroda and H. Iwakuro, Jpn. J. Appl. Phys. 32, 1273 (1993); G. Fortunato, L. Mariucci, A. Pecora, M. Fanfoni, and S. Priori, Appl. Phys. Lett. 60, 1564 (1992); M. Fanfoni, A. Pecora, G. Fortunato, L. Mariucci, S. Priori, and C. Quaresima, J. Non-Cryst. Solids 137&138, 1079 (1991).
6.R. Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues, and E. J. van Loenen, Phys. Rev. Lett. 55, 2332 (1985).
7.For lead references into the ongoing discussion of binding energy assignments in the interface region see Refs. 8 and 9 in this letter as well as the following references: A. Pasquarello, M. S. Hybertson, and R. Car, Phys. Rev. Lett. 74, 1024 (1995); H. Kageshima and M. Tabe in Control of Semiconductor Interfaces (Elsevier, New York, 1994); F. J. Himpsel, D. A. Lapiano-Smith, and J. F. Bevk, in Ref. 3, pp. 237–245.
8.F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
9.(a) M. M. Banaszak Holl and F. R. McFeely, Phys. Rev. Lett. 71, 2441 (1993); (b) M. M. Banaszak Holl, S. Lee, and F. R. McFeely, Appl. Phys. Lett. 65 1097 (1994); (c) S. Lee, S. Makan, M. M. Banaszak Holl, and F. R. McFeely, J. Am. Chem. Soc. 116, 11819 (1994).
10.See Ref. 9(b) and references therein.
11.F. Rochet, S. Rigo, M. Froment, C. D’Anterroches, C. Maillot, H. Roulet, and G. Dufour, Adv. Phys. 35, 237 (1986).
12.D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1977); F. Yonezawa, S. Sakamoto, and M. Hori, J. Non-Cryst. Solids 137&138, 135 (1991).

Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]