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Erratum: ‘‘Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−y Ge x Cy alloy layers on Si (100)’’ [Appl. Phys. Lett. 67, 3915 (1995)]
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14.This happens as a result of effective trapping of the other carrier. We note that it may be possible in the future to synthesize ultrapure organic materials which transport both carrier types.
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