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Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
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10.1063/1.115963
/content/aip/journal/apl/68/9/10.1063/1.115963
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/9/10.1063/1.115963
/content/aip/journal/apl/68/9/10.1063/1.115963
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/content/aip/journal/apl/68/9/10.1063/1.115963
1996-02-26
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/9/10.1063/1.115963
10.1063/1.115963
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