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Boron‐compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities
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8.Electronic mail: firstname.lastname@example.orgPhotoconductivity and dark conductivity of -Si:H intentionally doped with oxygen as a function of boron concentration. Oxygen concentration is . The broken lines indicate the photoconductivity and dark conductivity of intrinsic -Si:H. Photoconductivity was measured under AM-1, 100 light at room temperature, and dark conductivity was measured at 25 °C.Optical band gap, photoconductivity, and dark conductivity of oxygen doped and oxygen–boron compensated -Si:H as a function of oxygen concentration. The ratio of boron to oxygen is kept at in the compensated -Si:H. Optical gap was calculated from vs plots. Photoconductivity was measured under AM-1, 100 light at room temperature, and dark conductivity was measured at 25 °C.Subband gap absorption coefficient of intrinsic, boron doped, and boron–oxygen and boron–nitrogen compensated -Si:H, measured by the constant photocurrent method. The impurity concentration of the samples is given in Table I.
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