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Growth of 6H–SiC on 6H–SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures
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10.1063/1.115969
/content/aip/journal/apl/68/9/10.1063/1.115969
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/9/10.1063/1.115969
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/content/aip/journal/apl/68/9/10.1063/1.115969
1996-02-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of 6H–SiC on 6H–SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/68/9/10.1063/1.115969
10.1063/1.115969
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