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Charge trapping, isolated Ge defects, and photosensitivity in sputter deposited GeO2:SiO2 thin films
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10.1063/1.117612
/content/aip/journal/apl/69/10/10.1063/1.117612
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/10/10.1063/1.117612
/content/aip/journal/apl/69/10/10.1063/1.117612
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/content/aip/journal/apl/69/10/10.1063/1.117612
1996-09-02
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge trapping, isolated Ge defects, and photosensitivity in sputter deposited GeO2:SiO2 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/10/10.1063/1.117612
10.1063/1.117612
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