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Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n‐AlGaAs/p‐GaAs/n‐InGaAs heterojunction phototransistor
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10.1063/1.117044
/content/aip/journal/apl/69/11/10.1063/1.117044
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/11/10.1063/1.117044
/content/aip/journal/apl/69/11/10.1063/1.117044
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/content/aip/journal/apl/69/11/10.1063/1.117044
1996-09-09
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n‐AlGaAs/p‐GaAs/n‐InGaAs heterojunction phototransistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/11/10.1063/1.117044
10.1063/1.117044
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