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Simple method for evaluating process‐induced charging damage to the gate oxide of metal‐oxide‐semiconductor devices
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10.1063/1.117480
/content/aip/journal/apl/69/12/10.1063/1.117480
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/12/10.1063/1.117480
/content/aip/journal/apl/69/12/10.1063/1.117480
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/content/aip/journal/apl/69/12/10.1063/1.117480
1996-09-16
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simple method for evaluating process‐induced charging damage to the gate oxide of metal‐oxide‐semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/12/10.1063/1.117480
10.1063/1.117480
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