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Time‐resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
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10.1063/1.116889
/content/aip/journal/apl/69/14/10.1063/1.116889
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/14/10.1063/1.116889
/content/aip/journal/apl/69/14/10.1063/1.116889
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/content/aip/journal/apl/69/14/10.1063/1.116889
1996-09-30
2015-01-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time‐resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/14/10.1063/1.116889
10.1063/1.116889
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