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Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer
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10.1063/1.117725
/content/aip/journal/apl/69/17/10.1063/1.117725
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/17/10.1063/1.117725
/content/aip/journal/apl/69/17/10.1063/1.117725
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/content/aip/journal/apl/69/17/10.1063/1.117725
1996-10-21
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/17/10.1063/1.117725
10.1063/1.117725
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