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Lattice‐matching SiC substrates with GaN
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5.We have Å for GaN and 3.08 Å for 6H–SiC, from Ref. 6, giving Å.
6.Landolt–Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17a, Semiconductors: Physics of Group IV and III-V Compounds, edited by O. Madelung, M. Schulz, and H. Weiss (Springer-Verlag, Berlin, 1982).
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10.Sapphire is the most widely used substrate for GaN despite having a different crystal structure, =13.8%,and a proclivity toward producing buckled surfaces with pyramidal features similar to those observed for 6H–SiCC-terminated substrates.
11.J. A. Dean, Lange's Handbook of Chemistry, 14th ed. (McGraw-Hill, New York, 1992) lists the ionic radius of as 1.46 Å. The covalent radius of N is listed as 0.75 Å, in Periodic Table of the Elements (Papertech Marketing Group, Inc., 163 Buttermilk Ave., Unit 12, Concord, Ontario L48 3X8 Canada, 1994).
12.We reduced the covalent radii (Ref. 11) for Ga and N by 0.03 Å, in order to reproduce the measured lattice constant of GaN, 3.19 Å.
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16.Similar superlattice Hamiltonians have been discussed in S. Y. Ren and J. D. Dow, Phys. Rev. B 39, 7796 (1989); J. Appl. Phys. 65, 1987 (1989).
17.S. Y. Ren and J. D. Dow (unpublished).
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