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Formation of self‐aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography
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10.1063/1.117191
/content/aip/journal/apl/69/24/10.1063/1.117191
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/24/10.1063/1.117191
/content/aip/journal/apl/69/24/10.1063/1.117191
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/content/aip/journal/apl/69/24/10.1063/1.117191
1996-12-09
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of self‐aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/24/10.1063/1.117191
10.1063/1.117191
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