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Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual‐seed crystal method
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10.1063/1.117203
/content/aip/journal/apl/69/24/10.1063/1.117203
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/24/10.1063/1.117203
/content/aip/journal/apl/69/24/10.1063/1.117203
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/content/aip/journal/apl/69/24/10.1063/1.117203
1996-12-09
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual‐seed crystal method
http://aip.metastore.ingenta.com/content/aip/journal/apl/69/24/10.1063/1.117203
10.1063/1.117203
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