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Enhancement of deep acceptor activation in semiconductors by superlattice doping
1.R. F. Davis, Physica B 185, 1(1993).
2.H. Markoç andS. Strite, J. Vac. Sci. Technol. B 10, 1237(1992).
3.E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, United Kingdom, 1993), p. 123.
4.The parameters used in the calculation are , , , and =200 meV. The effective density of states, is calculated from the parabolic band model using the GaN effective hole mass of .
5.C. Mailhiot,Y. C. Chang, andT. C. Mc Gill, Phys. Rev. B 26, 4449(1982).
6.The assistance of the Center for Computational Science at Boston University is acknowledged.
7.The materials parameters included , , =200 meV, =300 K, =9.0.
8.A small modulation of the composition will leave the semiconductor “GaN-like.” The effective density of states ( ) and the acceptor binding energy ( are therefore taken to be constant, i.e., independent of the composition. Impurity activation energies in ternary III–V nitrides were reviewed in Ref. 2. More experimental data would be required to take into account the possible composition dependence of the acceptor activation energy. The corrections to the results presented here would, however, be minor.
9.E. F. Schubert,L. W. Tu,G. J. Zydzik,R. F. Kopf,A. Benvenuti, andM. R. Pinto, Appl. Phys. Lett. 60, 466(1992).
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