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Strained InGaAsP/InGaAsP/InAsP multi‐quantum well structure for polarization insensitive electroabsorption modulator with high power saturation
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5.Map of maximum barrier height δ, at different compositions, for heavy and light holes at fixed InGaAsP well composition [X(In)=0.520, Y(As)=0.677]. The dashed lines area represents the barrier height lower than 50 meV. Straight lines show the strain for different compositions on InP substrate.Schematic of conduction band structure. Absolute transmission for TE (solid line) and TM (dashed line) modes against reverse applied bias at different operating wavelengths for 160 μm cavity long.Response of modulators tested as photodiode for applied biases of 0.2 and −1.0 V.Optical power in the output fiber vs optical power in the input fiber for different applied biases.10, 887(1995).
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