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DIRECT MEASUREMENT OF THE DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P‐N JUNCTION
1.This work was supported in part by the Electronic Technology Division, Air Force Avionics Laboratory, Wright‐Patterson Air Force Base, Ohio, under Contract AF 33(615)‐1045, in part by the Joint Services Electronics Program (U.S. Army, U.S. Navy and U.S. Air Force) under Grant No. AF‐AFOSR‐139‐64, and in part by the University of California. N. C. MacDonald was supported by an NSF Traineeship.
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4.D. Green, J. E. Sandor, T. W. O’Keeffe, and R. K. Matta, “Reversible Changes in Transistor Characteristics Caused by Scanning Electron Microscope Examination,” Appl. Phys. Letters 6, 3–4 (1965).
5.R. L. Davies and F. E. Gentry, “Control of Electric Field at the Surface of P‐N Junctions,” IEEE PTG‐ED‐11, 313–23 (1964).
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