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LASER‐ACTION THRESHOLD IN ELECTRON‐BEAM EXCITED GALLIUM ARSENIDE
1.C. E. Hurwitz and R. J. Keyes, Appl. Phys. Letters 5, 139 (1964).
2.D. A. Cusano, Solid State Commun. 2, 353 (1964).
3.D. A. Cusano, S. J. Lubowsky, and J. D. Kingsley, Bull. Am. Phys. Soc. 10, 73 (1965).
4.G. Lasher and F. Stern, Phys. Rev. 133, A553 (1964).
5.G. J. Lasher, IBM J. Res. Develop. 7, 58 (1963).
6.The index of refraction near the absorption edge of GaAs is given in Fig. 1 of F. Stern, Phys. Rev. 133, A1651 (1964).
7.W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964);
7.D. E. Hill, Phys. Rev. 133, A867 (1964);
7.M. D. Sturge, Phys. Rev. 127, 768 (1962).
8.C. A. Klein, to be published in Proc. Conf. Phys. Quantum Electronics, San Juan (1965).
9.Using a density‐of‐states mass as indicated by C. Hilsum, in Physics of Semiconductors (Dunod, Paris, 1964), p. 1127.
10.The free‐carrier absorption in n‐type GaAs doped to is about (W. J. Turner and W. E. Reese, loc. cit.).
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