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InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition
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10.1063/1.119298
/content/aip/journal/apl/70/1/10.1063/1.119298
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/1/10.1063/1.119298
/content/aip/journal/apl/70/1/10.1063/1.119298
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/content/aip/journal/apl/70/1/10.1063/1.119298
1997-01-06
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/1/10.1063/1.119298
10.1063/1.119298
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