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Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in -implanted polycrystalline silicon gate
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10.1063/1.119304
/content/aip/journal/apl/70/1/10.1063/1.119304
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/1/10.1063/1.119304
/content/aip/journal/apl/70/1/10.1063/1.119304
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/content/aip/journal/apl/70/1/10.1063/1.119304
1997-01-06
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/1/10.1063/1.119304
10.1063/1.119304
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