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Dislocation blocking in layers grown on GaAs substrates revealed by strain sensitive etching with aqueous solutions
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10.1063/1.119054
/content/aip/journal/apl/70/21/10.1063/1.119054
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/21/10.1063/1.119054
/content/aip/journal/apl/70/21/10.1063/1.119054
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/content/aip/journal/apl/70/21/10.1063/1.119054
1997-05-26
2015-08-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation blocking in InxGa1−xAs(x<0.20) layers grown on GaAs substrates revealed by strain sensitive etching with aqueous CrO3–HF solutions
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/21/10.1063/1.119054
10.1063/1.119054
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