1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A tunneling field-effect transistor with 25 nm metallurgical channel length
Rent:
Rent this article for
USD
10.1063/1.118731
/content/aip/journal/apl/70/22/10.1063/1.118731
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/22/10.1063/1.118731
/content/aip/journal/apl/70/22/10.1063/1.118731
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/70/22/10.1063/1.118731
1997-06-02
2014-08-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A tunneling field-effect transistor with 25 nm metallurgical channel length
http://aip.metastore.ingenta.com/content/aip/journal/apl/70/22/10.1063/1.118731
10.1063/1.118731
SEARCH_EXPAND_ITEM