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Novel post-etching treatment of small windows in oxide for selective epitaxial growth
1.H. Fujimaki, K. Yamano, and K. Suzuki, IEICE Trans. Electron. E79-C, 549 (1996).
2.M. C. Öztürk and J. J. Wortman, Mater. Res. Soc. Symp. Proc.387, 355 (1995).
3.K. L. Wang, S. G. Thomas, and M. O. Tanner, J. Mater. Sci. Mater. Electron. 6, 311 (1995).
4.R. Bashir, S. Venkatesan, G. W. Neudeck, and J. P. Denton, IEEE Electron. Device Lett. 13, 392 (1992).
5.H.-K. Liou, E. S. Yang, and K. N. Tu, Appl. Phys. Lett. 63, 911 (1993).
6.G. S. Oehrlein and Y. H. Lee, J. Vac. Sci. Technol. A 5, 1585 (1987).
7.J. C. Lou, W. Oldham, H. Kawayoshi, and P. Ling, J. Appl. Phys. 71, 3225 (1992).
8.G. Schmidt, W. Langheinrich, and K. Heime, Solid State Electron. 37, 587 (1994).
9.M. R. Goulding, Mater. Sci. Eng. B 17, 47 (1993).
10.J. W. H. Maes, W. Heuvelman, J. Caro, K. Werner, H. W. Zandbergen, and S. Radelaar, Microelectron. Eng. 27, 99 (1995).
11.For each element, an XPS sensitivity factor is taken into account. The factors used are for pure solids. The effective factors for the samples considered here can be somewhat different, because they have a composite structure. This however does not impede comparison of the concentration on different samples.
12.After submission of the manuscript we became aware of the work of Richter et al. [Vacuum47, 4327 (1996)], who analyzed the effectiveness of a post-etching treatment in a plasma with Auger electron spectroscopy. These authors, however, only treated large areas and subsequent selective epitaxy of Si was not demonstrated.
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