1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
GaN and molecular beam epitaxy monitored by reflection high-energy electron diffraction
Rent:
Rent this article for
USD
10.1063/1.119408
/content/aip/journal/apl/71/13/10.1063/1.119408
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/13/10.1063/1.119408
Loading

Article metrics loading...

/content/aip/journal/apl/71/13/10.1063/1.119408
1997-09-29
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/13/10.1063/1.119408
10.1063/1.119408
SEARCH_EXPAND_ITEM