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Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
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10.1063/1.120262
/content/aip/journal/apl/71/21/10.1063/1.120262
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/21/10.1063/1.120262
/content/aip/journal/apl/71/21/10.1063/1.120262
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/content/aip/journal/apl/71/21/10.1063/1.120262
1997-11-24
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/21/10.1063/1.120262
10.1063/1.120262
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