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Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials
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10.1063/1.120552
/content/aip/journal/apl/71/21/10.1063/1.120552
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/21/10.1063/1.120552
/content/aip/journal/apl/71/21/10.1063/1.120552
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/content/aip/journal/apl/71/21/10.1063/1.120552
1997-11-24
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/21/10.1063/1.120552
10.1063/1.120552
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