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Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications
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10.1063/1.120344
/content/aip/journal/apl/71/23/10.1063/1.120344
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/23/10.1063/1.120344
/content/aip/journal/apl/71/23/10.1063/1.120344
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/content/aip/journal/apl/71/23/10.1063/1.120344
1997-12-08
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/23/10.1063/1.120344
10.1063/1.120344
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