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High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
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10.1063/1.120463
/content/aip/journal/apl/71/25/10.1063/1.120463
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/25/10.1063/1.120463
/content/aip/journal/apl/71/25/10.1063/1.120463
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/content/aip/journal/apl/71/25/10.1063/1.120463
1997-12-22
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/25/10.1063/1.120463
10.1063/1.120463
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