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Recombination characteristics of minority carriers near the interface using the light beam induced current technique
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10.1063/1.120545
/content/aip/journal/apl/71/26/10.1063/1.120545
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/26/10.1063/1.120545
/content/aip/journal/apl/71/26/10.1063/1.120545
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/content/aip/journal/apl/71/26/10.1063/1.120545
1997-12-29
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/26/10.1063/1.120545
10.1063/1.120545
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