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Evidence of nonuniform carrier distribution in multiple quantum well lasers
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7.The temperature dependence of the laser wavelength in sample A above 190 K can be interpreted by the band filling effect; laser wavelength shifts toward short wavelength side due to the increase of threshold carrier density. The shift cancels the change of band gap energy. The increase of threshold carrier density is larger in sample A than sample B, because of the large internal loss for lasing in the thin wells.
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