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Single-crystal Si field emitter fabricated by anodization
1.C. A. Spindt, J. Appl. Phys. 39, 3504 (1968).
2.K. Betsui, Technical Digital Fourth International Vacuum Microelectronics Conference (unpublished), p. 26.
3.H. F. Gray and J. L. Show, Technical Digital International Electron Devices Meeting, IEEE (unpublished) p. 221.
4.M. Nakamoto, T. Ono, Y. Nakamura, and K. Ichimura, Technical Digital Seventh International Vacuum Microelectronics Conference (unpublished) p. 41.
5.T. Asano and J. Yasuda, Jpn. J. Appl. Phys. Part 1 35, 6632 (1996).
6.S. M. Zimmerman and V. T. Babie, IEEE Trans. Electron Devices 38, 2294 (1991).
7.K. Imai, Solid-State Electron. 24, 159 (1981).
8.K. Imai and H. Unno, Ext. Abs. 15th Conf. Solid State Devices and Materials Tokyo (unpublished) p. 105.
9.K. Higa and T. Asano, Jpn. J. Appl. Phys. Part 1 35, 6648 (1996).
10.D. Kim, S. J. Kwon, and J. D. Lee, J. Vac. Sci. Technol. B 14, 1906 (1996).
11.N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, and T. Yonehara, J. Electrochem. Soc. 142, 3116 (1995).
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