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ZnSe epitaxy on a GaAs(110) surface
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10.1063/1.119622
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    Affiliations:
    1 Joint Research Center for Atom Technology, Angstrom Technology Partnership, 1-1-4 Higashi, Tsukuba 305, Japan
    2 Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, 1-1-4 Higashi, Tsukuba 305, Japan
    3 Institute for Material Research, Tohoku University, Sendai 980, Japan
    4 Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, 1-1-4 Higashi, Tsukuba 305, Japan
    Appl. Phys. Lett. 71, 1192 (1997); http://dx.doi.org/10.1063/1.119622
/content/aip/journal/apl/71/9/10.1063/1.119622
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/content/aip/journal/apl/71/9/10.1063/1.119622
1997-09-01
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnSe epitaxy on a GaAs(110) surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/71/9/10.1063/1.119622
10.1063/1.119622
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