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Positive charging of thermal interface by hydrogen annealing
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10.1063/1.120650
/content/aip/journal/apl/72/1/10.1063/1.120650
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120650
/content/aip/journal/apl/72/1/10.1063/1.120650
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/content/aip/journal/apl/72/1/10.1063/1.120650
1998-01-05
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120650
10.1063/1.120650
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