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Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using
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10.1063/1.120651
/content/aip/journal/apl/72/1/10.1063/1.120651
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120651
/content/aip/journal/apl/72/1/10.1063/1.120651
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/content/aip/journal/apl/72/1/10.1063/1.120651
1998-01-05
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120651
10.1063/1.120651
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