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Wurtzite GaN epitaxial growth on a Si(001) substrate using as an intermediate layer
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10.1063/1.120660
/content/aip/journal/apl/72/1/10.1063/1.120660
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120660
/content/aip/journal/apl/72/1/10.1063/1.120660
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/content/aip/journal/apl/72/1/10.1063/1.120660
1998-01-05
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/1/10.1063/1.120660
10.1063/1.120660
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